High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications

نویسندگان

  • U. H. Andre
  • R. S. Pengelly
چکیده

Worldwide Interoperability for M i c r o w a v e Access, better known as WiMAX, is a standardsbased wireless technology for providing highspeed, last-mile broadband connectivity to homes and businesses as well as for mobile wireless networks. With the fixed version of WiMAX, based on IEEE 802.16-2004, transmissions can potentially carry data traffic over more than 30 miles (~50 km) in rural areas, 6 miles (~10 km) in suburban areas, and 3 miles (~5 km) in dense urban areas. The technology is seen as both complement and successor to Wi-Fi, which sends data over shorter distances. The fixed version of WiMAX can provide data rates up to 75 megabits per second (Mbps) per four-sector base station. WiMAX will be instrumental in bringing broadband wireless to homes and offices, providing the backhaul for Wi-Fi hotspots, and eventually connecting users to the Internet in places not covered by 802.11. In those parts of the world lacking a well developed wired infrastructure, 802.16 offers a practical way to extend service to many different parts of a country, such as China or India. WiMAX can bring broadband access into the homes and businesses of millions of people in rural and developing markets. Table 1 shows a summary of the various allocated frequencies for WiMAX worldwide including those bands that are already populated with other services. For example, WiMAX services that would use the so-called BRS (broadband radio services) band around 2.5 GHz may have to be compliant to transmitters that are co-located so there are strict FCC regulations (04-258) that require adherence. In general the average output powers required under either standard or proprietary modulation/data schemes are in the range of 1 to 4 watts for fixed access and 20 watts for mobile scenarios compliant to IEEE 802.16. In general transmitters need to adhere to both GaN HEMT power transistors are a key enabling technology for successful design of WiMAX radio systems. This article demonstrates the performance enhancements offered by new transistor products. System / Region Frequency Band (GHz)

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

High-Power, High-Efficiency, GaN HEMT Power Amplifiers for 4G Applications

Today’s wireless system requirements demand increasing performance from power amplifiers. The higher gain and output power available from today’s transistors reduce the number of amplifier stages, and improved efficiency decreases system DC power requirements and generated heat. But at these higher power and efficiency levels, power amplifier linearity needs to meet or exceed the requirements o...

متن کامل

GaN HEMT Amplifier for C-band Space Applications

1. Introduction With the diversifying functions and increasing traffic of recent satellite communications, the amplifiers installed in satellites must provide higher power and improved efficiency. Commonly-used satellite-mounted amplifiers are, in general, either traveling wave tube amplifiers (TWTAs) or solid state power amplifiers (SSPAs) using gallium arsenide field-effect transistors (GaAs ...

متن کامل

Investigating the Linearity Performance of DMG AlGaN/GaN HEMT for Improved RF Applications

In the present work, Dual Material Gate (DMG) AlGaN/GaN High Electron Mobility Transistor (HEMT) has been studied for its improved linearity performance on the basis of VIP3 (i.e. extrapolated input voltage at which the first and third order harmonic voltages are equal) and compared with the conventional Single Material Gate (SMG) AlGaN/GaN HEMT. The influence of the device parameters such as t...

متن کامل

GaN Device for Highly Efficient Power Amplifiers

Fujitsu has been developing gallium nitride high electron mobility transistors (GaNHEMT) for small transmitter amplifiers for Long Term Evolution (LTE) base stations. The use of GaN-HEMT in highly efficient transmitter amplifiers has attracted much attention because of its high breakdown voltage characteristics. High-efficiency amplifiers with high gain are needed to decrease the power consumpt...

متن کامل

A new generation of Gallium Nitride (GaN) based Solid State Power Amplifiers for Satellite Communication

The introduction of Gallium Nitride High Electron Mobility Transistors (GaN HEMT) in early 2000 has left an undeniable mark on the entire satellite communication landscape. It is now possible for the first time since the introduction of the Solid State Microwave Technology to design and manufacture Power Amplifiers that exceed by several orders of magnitude the reliability, linearity, power den...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2006